| 摘要 |
The method involves depositing a hybrid material layer (11) having an insulating binder with semiconductor particles in suspension, in a trench, where the binder is chosen from gel, varnish, glue and resin. The semiconductor particles are chosen from a group comprising zinc oxide, silicon carbide and/or graphite. An insulating material e.g. silicone gel, layer is deposited above conductive strips e.g. collector strip (5), emitter strip (6) and control strip (7), and the hybrid material layer. |
