| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a plurality of thresholds and suppresses a decrease in yield and a decrease in reliability due to dust and local variance of impurities, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has an MOSFET of a first conductivity type and an MOSFET of a second conductivity type formed on a semiconductor substrate (Sub.), wherein the MOSFET of the first conductivity type has a first gate electrode 15a containing impurities of the first conductivity type and a second gate electrode 15b containing impurities of the second conductivity type, and the MOSFET of the second conductivity type has a third gate electrode 15c containing the impurities of the first conductivity type and a fourth gate electrode 15d containing the impurities of the second conductivity type. COPYRIGHT: (C)2011,JPO&INPIT
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