| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a bump structure of high moisture resistance and high stress, and to provide a method of manufacturing the bump structure. SOLUTION: A first insulating protective film is so formed as to coat the periphery of a pad (electrode) on a semiconductor substrate and to expose the other part of the pad. A barrier metal layer is formed on the other part of the pad and on the part covering the periphery of pad of the first insulating protective film. A bump 5 is formed on a barrier metal layer. A process for accumulating the insulating protective film on the semiconductor substrate is performed, and the surface of the insulating protective film is dry-etched, and the tip of the bump 5 is removed to form a second insulating protective film 6 coating the barrier metal layer. The part in contact with the side surface of the bump 5 of the second insulating protective film 6 is a fillet form 7, wherein the film thickness of the second insulating protective film 6 is thick at the contact surface between the second insulating protective film 6 and the side surface of the bump 5 and it becomes thinner as getting away from the contact surface. COPYRIGHT: (C)2011,JPO&INPIT |
