发明名称 METHOD FOR INSPECTING PHOTOMASK BLANK OR INTERMEDIATE THEREOF, METHOD FOR DETERMINING DOSAGE OF HIGH-ENERGY RADIATION, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a new inspecting photomask blank or intermediate thereof, evaluating stress of a phase shift film giving a change in surface topography causing a dimensional error in working a photomask blank, a method for determining dosage of high-energy radiation, and a method for manufacturing a photomask blank. <P>SOLUTION: The photomask blank or an intermediate thereof which is manufactured by depositing a phase shift film on a substrate for a photomask, and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank or the intermediate thereof, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment. A stress to the substrate by the phase shift film after the substrate shape adjusting treatment is evaluated more accurately. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010237502(A) 申请公布日期 2010.10.21
申请号 JP20090086185 申请日期 2009.03.31
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 INAZUKI SADAOMI;KANEKO HIDEO;YOSHIKAWA HIROKI
分类号 G03F1/32;G03F1/50;G03F1/60;G03F1/68;H01L21/027 主分类号 G03F1/32
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