| 摘要 |
<p>PURPOSE: A method of manufacturing a nonvolatile storage device is provided to prevent the unevenness of electric property on a pillar by processing the sidewall with wet etch to form the edge of a hollow as a circle. CONSTITUTION: A memory cell is formed by laminating a rectifier element(D) and a variable resistor element. Memory cells are arranged at crossings of a plurality of word lines and a plurality of bit lines. The plural word lines are extended in column and row direction. The variable resistor element includes a metal oxide film. The rectifier element is a diode including poly-silicon.</p> |
