发明名称 ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide an organic semiconductor material which has high carrier mobility and stability and can form a film by an easy manufacture process, and an organic thin-film transistor using the material for an organic semiconductor layer. SOLUTION: The organic semiconductor material contains a compound or the like indicated by a formula 1. In the formula, R<SB>1</SB>indicates an unsubstituted or substituted branch alkyl group of a carbon number 3 to 8 or an unsubstituted or substituted cycloalkyl group of the carbon number 3 to 10, R<SB>2</SB>indicates a hydrogen atom or a structure configured by combining at least one or two or more of unsubstituted or a substituted thiophene residue, an unsubstituted or substituted pyrrole residue, and an unsubstituted or substituted furan residue, and X indicates a sulfur atom, a nitrogen atom or an oxygen atom. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232368(A) 申请公布日期 2010.10.14
申请号 JP20090077398 申请日期 2009.03.26
申请人 KYUSHU INSTITUTE OF TECHNOLOGY 发明人 MORIGUCHI TETSUJI;NAGAMATSU SHUICHI;TAKASHIMA SAZUKU;OKAUCHI TATSUO;MIZOGUCHI KATSUHIRO;KANEFUJI KEIICHI;HAYASE SHUJI
分类号 H01L51/30;C07C13/62;C07D495/04;H01L21/336;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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