| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, along with an oxidation treatment device, capable of suppressing degradation of performance due to substrate damage during oxide film formation. SOLUTION: A substrate 6a, which includes one surface, is prepared. Oxidation treatment is performed on one surface. At oxidation treatment, low-temperature thermal decomposition of O3 gas introduced generates O(<SP>3</SP>P) radicals. The O(<SP>3</SP>P) radicals are irradiated and excited, with a reddish orange light emitted from a light source 4a, to generate O(<SP>1</SP>D) radical. An oxide film is formed on one surface of the substrate 6a by O(<SP>1</SP>D) radical, at a low temperature, without damages. COPYRIGHT: (C)2011,JPO&INPIT
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