METHOD OF MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III-V compound semiconductor element containing GaAsSb as a group III-V compound semiconductor having good crystallinity.

SOLUTION: When a film of GaAsxSb1-x(0.33≤x≤0.65) as a group III-V compound semiconductor is formed, the sum of supply amounts of molecules of both group-V arsenic (As) and antimony (Sb) is ≥15 times as large as the supply amount of molecules of group-III gallium (Ga).

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