| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device for serving ion beam irradiation with highly uniform current density distribution, and to provide an ion beam adjusting method. SOLUTION: The ion implantation device is provided for irradiating a treated substrate with ion beams to implant ions thereinto. It includes a measuring part for measuring the current density distribution in the cross direction of the ion beams sectionally shaped zonal, an ion beam adjusting part having a plurality of lens means for bending the ion beams in the cross direction to adjust the current density distribution of the ion beams along the cross direction, and a control part for outputting a control signal showing a magnitude to bend the ion beams to the lens means depending on the current density distribution measured by the measuring part. The control part includes an upper limit value setting portion for setting an upper limit value for the magnitude of the control signal depending on at least one of the energy of the ion beams, the mass of ions constituting the ion beams, and a current in the ion beams, and outputs the control signal whose magnitude is the upper limit value or smaller. COPYRIGHT: (C)2011,JPO&INPIT
|
