| 摘要 |
PROBLEM TO BE SOLVED: To increase the yield of single longitudinal mode oscillation of a semiconductor laser to 100% theoretically. SOLUTION: The semiconductor laser includes: an active layer in which a diffraction grating is formed; a core layer connected to the active layer and having the diffraction grating extending in the core layer; and a substrate in which the active layer and the core layer are formed. The core layer has a band gap wider than that of the active layer, heights of the bottoms of the active layer and the core layer with reference to the surface of the substrate are constant over the active layer and the core layer, and heights of the tops of the active layer and the core layer with reference to the surface of the substrate are constant over the active layer and the core layer. COPYRIGHT: (C)2011,JPO&INPIT
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