Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.
申请公布号
WO2014116864(A1)
申请公布日期
2014.07.31
申请号
WO2014US12798
申请日期
2014.01.23
申请人
MICRON TECHNOLOGY, INC.
发明人
HOPKINS, JOHN;FAN, DARWIN FRANSEDA;SIMSEK-EGE, FATMA ARZUM;BRIGHTEN, JAMES;MAURI, AURELIO GIANCARLO;JAYANTI, SRIKANT