SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR EVALUATING SEMICONDUCTOR SUBSTRATE, AND ELECTRONIC DEVICE

摘要

Provided is a high-performance compound semiconductor epitaxial substrate having improved linearity of the voltage-current characteristics. A method for manufacturing such substrate and a method for evaluating such substrate are also provided. The semiconductor substrate is provided with: a compound semiconductor which generates a two-dimensional carrier gas; a carrier supplying semiconductor which supplies the compound semiconductor with a carrier; and a mobility reducing semiconductor which is disposed between the compound semiconductor and the carrier supplying semiconductor, and has a mobility reducing factor of reducing the carrier mobility to be smaller than that of the compound semiconductor.