发明名称 Diodes, and methods of forming diodes
摘要 Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
申请公布号 US7811840(B2) 申请公布日期 2010.10.12
申请号 US20080128334 申请日期 2008.05.28
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.;SRINIVASAN BHASKAR
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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