| 摘要 |
Non-volatile memory devices, systems, methods and computer readable code for configuring at least a portion of a non-volatile memory to provide a requested effective endurance are disclosed. According to some embodiments, a determined amount of physical memory is allocated for the at least a portion of non-volatile memory. According to some embodiments, for a given amount of configured physical memory, requesting a greater effective endurance provides a smaller amount of logically addressable memory. According to some embodiments, for a given amount of logically addressable memory, requesting a greater effective endurance configures a greater amount of physical memory. In some embodiments, a controller is operative to configure the at least a portion of non-volatile memory. Alternatively or additionally, driver code resides on a host device coupled to the non-volatile memory device. Optionally, a value of the requested endurance is specified in a command issued to the non-volatile memory device. According to some embodiments, the command may be issued at a time of manufacture and/or at a runtime of the non-volatile memory device. Exemplary non-volatile memory that may be configured includes but is not limited to NAND flash memory, NOR flash memory, and EEPROM memory. |
