| 摘要 |
<p>PURPOSE: A method for fabricating a semiconductor device is provided to reduce the delay of an RC by reducing the thickness between wires. CONSTITUTION: A first oxide film(12), a nitride film(13), a second oxide film(14), and a mask pattern are laminated on a substrate(10). A second oxide film is etched by using the mask pattern as an etch barrier. A second oxide film remaining on the nitride film is etched by using the mask pattern as the etch barrier. A trench is formed by etching the nitride film and the first oxide film. The first oxide film is etched in order to change a profile of a V-shaped to an U-shaped. A wiring(20) is formed by filling the electrode material into the trench.</p> |
