| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to remove an abnormal layer from CMP(Chemical Mechanical Polishing), so there is no need for an additional cleaning process. CONSTITUTION: A groove is formed in the cell region(C) of a semiconductor substrate. A buried gate is formed in the bottom of the groove. An insulating layer is formed on the cell region. A first conductive film(110) is formed on the insulating layer of the cell region and around the semiconductor substrate thereof. A contact hole is selectively formed in the cell region by etching the first conductive film and the insulating layer. A second conductive film is formed on the first conductive film in order to fill in a contact hole. A plug(116) for a bit line is formed in the contact hole by removing the second conductive film through a CMP process.
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