| 摘要 |
PROBLEM TO BE SOLVED: To reduce a cost and a scale of a non-volatile storage device. SOLUTION: The non-volatile storage device is provided with at least one first wiring extending in a first direction, at least one second wiring which is arranged on an upper layer of first wiring and extends to a second direction that is not parallel with the first direction, and a storage cell in which the first wiring and the second wiring cross each other and is arranged between the first wiring and the second wiring and is mainly composed of a metal oxide. A reformed layer whose oxygen concentration is relatively lower than the that of other part is formed in at least a part of the storage element. Thus, the cost and the scale of the non-volatile storage device can be reduced. COPYRIGHT: (C)2011,JPO&INPIT
|
