| 摘要 |
The objective of this invention is to present a semiconductor device manufacturing method with which the formation of voids inside an underfill resin can be prevented using a simple configuration. The semiconductor device manufacturing method of the present invention involves a step in which multiple electrodes formed on one principal surface of each semiconductor chip 20 are flip-chip bonded to corresponding conductive areas formed on a substrate, a step (condition 1) in which liquid underfill resin 40 is supplied along the circumferences of semiconductor chips 20 mounted on the substrate in the atmospheric pressure so as to form air pocket 110 between each semiconductor chip 20 and substrate 30, a step (conditions 2, 3, 4) in which the substrate is transferred from the atmospheric pressure into a vacuum atmosphere in order to discharge the air from air pockets 110, and a step (conditions 5, 6, 7, 8) in which the substrate is transferred from the vacuum atmosphere into the atmospheric pressure in order to let underfill resin 40 advance deep in the semiconductor chips.
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