发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To down-size a semiconductor device including power amplifier circuits of different systems. <P>SOLUTION: The different power amplifier circuits 2A, 2B of the systems which constitute an RF power module used for a dural type digital cellular phone capable of handling high frequency signals in two frequency bands are disposed in the same IC chip 1C. The power amplifier circuits 2A, 2B are disposed around the IC chip 1C, and a peripheral circuit 3 is disposed between the power amplifier circuits 2A, 2B. Thus, the power amplifier circuits 2A, 2B of the different systems are provided within the same IC chip 1C to enable a size reduction. Further, the distance between the power amplifier circuits 2A, 2B is ensured even if the power amplifier circuits 2A, 2B of the different systems are provided within the same IC chip 1C. The coupling between the power amplifier circuits 2A, 2B can be suppressed and crosstalk between the power amplifier circuits 2A, 2B can be suppressed. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010226120(A) 申请公布日期 2010.10.07
申请号 JP20100106357 申请日期 2010.05.06
申请人 RENESAS TECHNOLOGY CORP 发明人 SHIMIZU TOSHIHIKO;MATSUNAGA YOSHIKUNI;KUSAKARI YURI
分类号 H01L21/8234;H01L21/822;H01L23/66;H01L27/04;H01L27/06;H01L27/088;H01L29/78;H03F3/14;H03F3/189;H03F3/195;H03F3/20;H03F3/24;H03F3/68 主分类号 H01L21/8234
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