| 摘要 |
According to the invention, a Ti film is formed on a substrate and is annealed at the temperatures of 350° C.-400° C. under oxidative environment, so that a TiO2 film having a rutile crystal structure is formed. Since the TiO2 film having a rutile crystal structure has a high dielectric constant, it is useful for a capacitive insulating film for a capacitor.
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