| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, the method reducing an interval between patterns (for instance, between gate electrodes) as much as possible without adding an extra process. <P>SOLUTION: A resist layer R is formed on a film P to be processed, the film P being formed of a polycrystalline silicon film. By using an exposure mask having a transfer pattern narrower than a limit value of photolithography and having a part of a slit connected thereto, first and second patterns and a third pattern are formed, wherein the third pattern connects the first and second patterns to each other and is smaller in thickness than the first and second patterns. The film to be processed is etched by using the first and second patterns as a mask, the third pattern is removed, and the film to be processed, which is exposed by the removal of the third pattern, is etched to form gate electrode patterns 7a, 7d small in an interval. <P>COPYRIGHT: (C)2011,JPO&INPIT |
