发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A first external connection terminal at a first row is disposed to position at upside of a first I/O cell, and a second external connection terminal at a second row is formed at upside of a boundary portion between two adjacent first I/O cells. Here, the first external connection terminal and the second external connection terminal are disposed to be separated for a predetermined distance so as not to have an overlapped portion with each other, and formed in an identical layer. According to the constitution, it is possible to prevent disadvantages such as characteristic deterioration of a semiconductor integrated circuit and accuracy deterioration of an electrical inspection.
申请公布号 US2010252830(A1) 申请公布日期 2010.10.07
申请号 US20100818588 申请日期 2010.06.18
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 OSAJIMA TORU
分类号 H01L23/544;H01L21/71;H01L23/488 主分类号 H01L23/544
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