发明名称 PRODUCTION METHOD OF NITRIDE CRYSTAL, DISSOLUTION AND TRANSPORTATION ACCELERATOR FOR AMMONOTHERMAL RAW MATERIAL, AND GROWTH ACCELERATOR FOR NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for increasing the growth rate of nitride crystal by an ammonothermal method without employing high temperature and high pressure conditions. SOLUTION: A nitride crystal is grown by an ammonothermal method in ammonia containing an ammonia pyrolysis catalyst 7 that does not corrode or dissolve supercritical ammonia. The ammonia pyrolysis catalyst 7 is the elemental substance of Ru, Rh, Pd, W, Re or Os or the alloy of one of Ru, Rh, Pd, W, Re, Os, Ir or Pt and other metals. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010222152(A) 申请公布日期 2010.10.07
申请号 JP20090068764 申请日期 2009.03.19
申请人 MITSUBISHI CHEMICALS CORP;TOHOKU UNIV;JAPAN STEEL WORKS LTD:THE 发明人 MIKAWA YUTAKA;KIYOMI MAKIKO;ISHIGURO TORU;KAGAMITANI YUJI;YOKOYAMA CHIAKI;TOMITA DAISUKE;YAMAMURA YOSHIHIKO
分类号 C30B29/38;C30B7/10 主分类号 C30B29/38
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