| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a light emitting diode capable of easily enhancing light extraction efficiency, and to provide a method of manufacturing the epitaxial wafer for the light emitting diode. <P>SOLUTION: The method of manufacturing the epitaxial wafer for an AlGaInP based light emitting diode, using vapor deposition method, at least performs forming of a laminate by laminating: a light emitting portion 6 which has an n-type clad layer 2, an active layer 3 and a p-type clad layer 4 which are made of AlGaInP based materials; and a p-type GaP current dispersion layer 5. When the GaP current dispersion layer 5 is formed, concavities and convexities are formed on the surface 5c of the GaP current dispersion layer 5 by increasing a growth speed on a surface side part of the GaP current dispersion layer 5. <P>COPYRIGHT: (C)2011,JPO&INPIT |
