| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a flat/good quality-continuous film ofβ-FeSi<SB>2</SB>and high carrier mobility, in a method for manufacturing ferrous silicide, a semiconductor substrate, and an optical semiconductor device. <P>SOLUTION: The method for depositing a ferrous silicide layer 4b ofβ-FeSi<SB>2</SB>on a silicon (Si) substrate 1 having a crystal surface 001 on the surface, having a ferrous silicide layer formation process that performs epitaxial growth on the ferrous silicide layer directly or through a skew Si layer on a SiGe layer provided on the Si substrate, the ferrous silicide layer formation process has a high temperature deposition process that deposits at least a part of the ferrous silicide layer by simultaneously supplying a ferrous (Fe) raw material and a Si raw material at a deposition temperature of 400°C or more and 940°C or less. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
