METHOD OF MANUFACTURING OF PCRAM DEVICE

摘要

PURPOSE: A method for manufacturing a phase-change memory device is provided to form a metal layer with desired patterns by applying a sacrificial film to a phase-change pattern insulating film before an etching process is performed. CONSTITUTION: A heater(240) is formed on a semiconductor substrate(200). A nitride film(231) is formed on the semiconductor substrate in order to insulate heaters. A phase-change pattern insulating film(250) is formed on the nitride film including the heaters. A sacrificial film is formed on the phase-change pattern insulating film. A mask pattern is formed on the sacrificial film in order to expose a phase-change forming region. The phase-change insulating film is etched to form a hole(250H) using the sacrificial film.