发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS REFRESHING METHOD
摘要 PURPOSE: A semiconductor memory device and its refreshing method are provided to improve the operation stability of the semiconductor memory device by distributing a peak current which is consumed in a refresh operation. CONSTITUTION: A refresh address generation part(410) generates a block address(X12~X9) and a word line address(X6~X3). The cell block address successively selects a plurality of memory cell blocks(420). The word line address selects the word line(WL) of the selected memory cell block(MAT). The memory cell block refresh the memory cell data of the word line in the cell block address and cell block. The memory cell block is comprised of an open bit line structure.
申请公布号 KR20100106143(A) 申请公布日期 2010.10.01
申请号 KR20090024629 申请日期 2009.03.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, DON HYUN
分类号 G11C11/4063;G11C11/406 主分类号 G11C11/4063
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