发明名称 |
SEMICONDUCTOR DEVICES HAVING A VERTICAL CHANNEL TRANSISTOR |
摘要 |
Embodiments according to the inventive concept can provide semiconductor devices including a substrate and a plurality of active pillars arranged in a matrix on the substrate. Each of the pillars includes a channel part that includes a channel dopant region disposed in a surface of the channel part. A gate electrode surrounds an outer surface of the channel part. The plurality of active pillars may be arranged in rows in a first direction and columns in a second direction crossing the first direction.
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申请公布号 |
US2010244124(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20100814121 |
申请日期 |
2010.06.11 |
申请人 |
SEO HYEOUNG-WON;YOON JAE-MAN;PARK DONG-GUN;KIM SEONG-GOO |
发明人 |
SEO HYEOUNG-WON;YOON JAE-MAN;PARK DONG-GUN;KIM SEONG-GOO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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