发明名称 |
NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER |
摘要 |
A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angleθ1 (about) 62° with respect to the facet (50a).
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申请公布号 |
US2010246624(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20080680412 |
申请日期 |
2008.09.25 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
HIROYAMA RYOJI;MIYAKE YASUTO;KUNO YASUMITSU;BESSHO YASUYUKI;HATA MASAYUKI |
分类号 |
H01S5/18;H01L33/00;H01L33/10;H01L33/16;H01L33/30;H01S5/22;H01S5/323 |
主分类号 |
H01S5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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