发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To actualize a desired delay time, miniaturize a delay circuit, and reduce power consumption in a protection circuit. SOLUTION: The delay circuit 100 includes a first inverter 101 to a third inverter 103, a fourth p channel MOSFET 7, a fourth n channel MOSFET 8, a delay resistor 121, and a capacitor 122. The delay resistor 121 is connected between an output terminal of the first inverter 101 and an input terminal of the second inverter 102. A gate terminal of the fourth n channel MOSFET 8 is connected to a node 113 located between the delay resistor 121 and the input terminals of the second inverter 102. The capacitor 122 is connected between the gate terminal and a drain terminal of the fourth n channel MOSFET 8. Capacity of the capacitor 122 is enlarged in false to an extent larger than physical electrostatic capacity of the capacitor 122, using feedback capacity of the fourth n channel MOSFET 8. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010219661(A) 申请公布日期 2010.09.30
申请号 JP20090061448 申请日期 2009.03.13
申请人 FUJI ELECTRIC SYSTEMS CO LTD 发明人 LU HONGFEI
分类号 H01L21/822;H01L21/8234;H01L21/8238;H01L27/04;H01L27/06;H01L27/08;H01L27/092;H01L29/739;H01L29/78;H01L29/786;H03K5/13;H03K17/08 主分类号 H01L21/822
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