发明名称 |
Evaluation method of semiconductor device |
摘要 |
A technology for analyzing and evaluating of a change of impurity content distribution at the heat treatment of electrodeposited copper film. There is provided a method of evaluating a semiconductor device, comprising providing an electrodeposited copper film formed while causing the deposition current to transit between the first state of current density and the second state of current density so as to attain a desired impurity content distribution and carrying out analysis and evaluation of any impurity diffusion from a change of impurity content distribution in the electrodeposited copper film between before and after heat treatment.
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申请公布号 |
US7803642(B2) |
申请公布日期 |
2010.09.28 |
申请号 |
US20090548851 |
申请日期 |
2009.08.27 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
SUNAYAMA MICHIE;SHIMIZU NORIYOSHI;HANEDA MASAKI |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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