| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for securely forming an interconnection that is required, along with a via having a high aspect ratio, to be processed carefully in a multistage interconnection in the VLSI technique and ULSI technique. SOLUTION: A plasma reducing process is provided, which reduces oxides or other contaminants using a compound containing nitrogen and hydrogen, in general, ammonia at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layer are improved and the number of the existing oxygen atoms is reduced compared to the typical physical sputter cleaning process of the oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially one in which copper is applied. COPYRIGHT: (C)2010,JPO&INPIT |
