| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for depositing a Cu film, which can deposit a CVD-Cu film having good surface properties. <P>SOLUTION: A wafer having a CVD-Ru film deposited on the surface is prepared. The surface of the Ru film is exposed to oxygen atmosphere and subjected to oxidation treatment before reduction treatment by hydrogen plasma, and then cleaned. A film deposition material consisting of a Cu complex is supplied to the surface of the Ru film thus cleaned, and a Cu film is formed by the CVD method. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
