| 摘要 |
PROBLEM TO BE SOLVED: To provide a process of producing a conductive film having high conductivity or low resistivity. SOLUTION: After depositing the conductive film on a substrate in a deposition chamber, a reducing gas is introduced into the chamber in preparation for unloading the substrate. The deposition chamber may be a batch CVD chamber and the deposited film may be a metal nitride, for example, a transition metal nitride such as titanium metal nitride. As part of preparation for unloading the substrate from the chamber, the substrate may be cooled and the chamber may be backfilled with the reducing gas to increase chamber pressure. Therein, it has been found that oxidants can be introduced into the chamber. The introduction of the reducing gas has been found to protect exposed metal-containing film from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and carrier, with the reducing agent being a minority component of the reducing gas. By supplying the reducing agent, effect of oxidation on the exposed metal-containing film is reduced, therefore enhancing conductive properties of the metal film. COPYRIGHT: (C)2010,JPO&INPIT |
