| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface-emitting laser including a GaAs contact layer of approximately 20 nm or less in thickness and having a light emission wavelength at 780 nm band or equal to or smaller than 780 nm band, the surface-emitting laser having stable characteristics with low resistance by avoiding an increase in contact resistance and a blackening phenomenon due to damage to the GaAs contact layer; and to provide a method of manufacturing the same. Ž<P>SOLUTION: The method of manufacturing the surface-emitting laser includes a laminated film-forming step of forming a laminated film by laminating, sequentially on a compound semiconductor substrate 1, a lower semiconductor multilayer film-reflecting mirror 3, a lower spacer layer 4, an active layer 5, an upper spacer layer 6, an upper semiconductor multilayer film-reflecting mirror 8, and a contact layer 9; a first protective film-forming step of forming a first protective film 10 including a compound semiconductor on the contact layer 9; a shape processing step of processing the shape of the laminated film; and a first protective film-etching step of exposing the contact layer 9 by etching the first protective film 10 after the shape processing process. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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