| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of eliminating variation in capacity even when a stacking displacement occurs in a lithographic process to form a first and a second electrodes constituting a capacitive element. SOLUTION: Each of a plurality of wiring layers L1 to L5 has insulating films 103 to 106, and a first electrode 101 and a second electrode 102, embedded remote from and oppositely to each other in the insulating film. The first electrode 101 in one wiring layer is disposed mutually opposite to the second electrode 102 in the other wiring layer formed in the upper or lower side of the first electrode. The width of the first electrode 101 in one wiring layer is different from that of the second electrode 102 in the other wiring layer. COPYRIGHT: (C)2010,JPO&INPIT |
