发明名称 METHOD FOR REDUCING LOW FREQUENCY NOISE OF TRANSISTOR
摘要 A method for reducing low frequency noise of a transistor operable at cryogenic temperatures includes a first step in which the transistor is illuminated with a light in a state that the transistor is activated and flowed current by supplying a power at a predetermined temperature, and a second step in which the transistor is operated at the predetermined temperature after the illumination of the light.
申请公布号 US2010237934(A1) 申请公布日期 2010.09.23
申请号 US20090406297 申请日期 2009.03.18
申请人 FUJIWARA MIKIO;SASAKI MASAHIDE;MATSUO HIROSHI;NAGATA HIROHISA 发明人 FUJIWARA MIKIO;SASAKI MASAHIDE;MATSUO HIROSHI;NAGATA HIROHISA
分类号 H03B1/00 主分类号 H03B1/00
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