发明名称 |
METHOD FOR REDUCING LOW FREQUENCY NOISE OF TRANSISTOR |
摘要 |
A method for reducing low frequency noise of a transistor operable at cryogenic temperatures includes a first step in which the transistor is illuminated with a light in a state that the transistor is activated and flowed current by supplying a power at a predetermined temperature, and a second step in which the transistor is operated at the predetermined temperature after the illumination of the light.
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申请公布号 |
US2010237934(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20090406297 |
申请日期 |
2009.03.18 |
申请人 |
FUJIWARA MIKIO;SASAKI MASAHIDE;MATSUO HIROSHI;NAGATA HIROHISA |
发明人 |
FUJIWARA MIKIO;SASAKI MASAHIDE;MATSUO HIROSHI;NAGATA HIROHISA |
分类号 |
H03B1/00 |
主分类号 |
H03B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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