| 摘要 |
A nonvolatile semiconductor memory device includes: a multilayer body with a plurality of insulating films and electrode films alternately stacked therein; a plurality of select gate electrodes provided on the multilayer body, extending in one direction orthogonal to a stacking direction of the multilayer body, and spaced from each other; semiconductor pillars penetrating through the multilayer body and the select gate electrodes; and a charge storage film provided between one of the electrode films and one of the semiconductor pillars, two neighboring ones of the semiconductor pillars penetrating through a common one of the select gate electrodes and penetrating through mutually different positions in a width direction of the select gate electrodes.
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