发明名称 |
Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot |
摘要 |
<p>The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
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申请公布号 |
EP2045371(A3) |
申请公布日期 |
2010.09.22 |
申请号 |
EP20080017323 |
申请日期 |
2008.10.01 |
申请人 |
SILTRON INC. |
发明人 |
HONG, YOUNG-HO;CHO, HYON-JONG;LEE, SUNG-YOUNG;SHIN, SEUNG-HO;LEE, HONG-WOO |
分类号 |
C30B15/20;C30B15/14;C30B29/06 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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