Photovoltaic cell forming method, involves realizing formation of overdoped area by pulsated laser radiation, where radiation eliminates anti-reflecting layer made of silicon nitride to form contact area

摘要

The method involves forming a contact area in an anti-reflecting layer (3) and an overdoped area by doping impurities i.e. phosphorus, in a substrate (1) and a doped layer (2). The areas are self-aligned. The overdoped area is formed by introduction of dopants from an outer dopant source to the substrate. The anti-reflecting layer and the dopant source are constituted by a silicon nitride layer incorporating the doping impurities. Formation of the overdoped area is realized by a pulsated laser radiation, where the radiation eliminates the anti-reflecting layer to form the contact area.