发明名称 |
OPTOELECTRONIC SYSTEMS PROVIDING HIGH-POWER HIGH-BRIGHTNESS LASER LIGHT BASED ON FIELD COUPLED ARRAYS, BARS AND STACKS OF SEMICONDUCTOR DIODE LASERS |
摘要 |
A semiconductor diode laser having a broad vertical waveguide and a broad lateral waveguide is disclosed emitting laser light in a single vertical mode and a single lateral mode narrow beam. The vertical waveguide comprises a coupled cavity structure, wherein light, generated in the active medium placed in the first cavity leaks into the second cavity and returns back. Phase matching conditions govern the selection of a single vertical mode. A multi-stripe lateral waveguide comprises preferably a lateral photonic band crystal with a lateral optical defect created by selected pumping of multistripes. This approach allows the selection of a single lateral mode having a higher optical confinement factor and/or a lower absorption loss and/or a lower leakage loss compared to the rest lateral optical modes. This enables a single lateral mode lasing from a broad area field coupled laser array. A laser system comprised of multiple field coupled laser arrays on a single wafer and a set of external mirrors enables an ultra-broad field coupled laser bar emitting a coherent laser light in a single vertical optical mode and a single lateral optical mode. A laser system comprised of multiple ultra-broad field coupled laser bars on different wafers and a set of external mirrors enables an ultra-broad field coupled laser stack emitting coherent laser light in a single vertical optical mode and a single lateral optical mode. This allows realization of ultrahigh power ultrahigh brightness laser systems based on semiconductor diode lasers. |
申请公布号 |
WO2010023094(A3) |
申请公布日期 |
2010.09.16 |
申请号 |
WO2009EP60350 |
申请日期 |
2009.08.10 |
申请人 |
PBC LASERS GMBH;SHCHUKIN, VITALY;LEDENTSOV, NIKOLAI |
发明人 |
SHCHUKIN, VITALY;LEDENTSOV, NIKOLAI |
分类号 |
H01S5/10;H01S5/40 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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地址 |
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