发明名称 METHOD FOR MANUFACTURING HIGH-PURITY SILICON MATERIAL
摘要 The present invention discloses a method for manufacturing a silicon material with high purity, and the method comprises the following steps of: selecting high purity quartz as a raw material; cleaning and comminuting the quartz; choosing the particle size of the quartz between 20 mm and 80 mm by an optical analyzer; purifying the quartz; melting the quartz in a metallurgical furnace; proceeding carbothermal reduction and post-refining to the quartz so as to obtain liquid silicon; draining the liquid silicon into a ladle through a tap hole of the metallurgical furnace; removing impurities of the liquid silicon in the ladle by Moist reduction Gas Blowing and Slag Treating; pouring the liquid silicon into a casting area of a crystal growth furnace; proceeding Directional Solidification to the liquid silicon in the casting area so as to obtain a solid silicon material.
申请公布号 US2010233063(A1) 申请公布日期 2010.09.16
申请号 US20090615323 申请日期 2009.11.10
申请人 RADIANT TECHNOLOGY CO. 发明人 CHOU HSIEN-CHUNG
分类号 C01B33/037 主分类号 C01B33/037
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