| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device having a junction FET. <P>SOLUTION: A semiconductor device includes a junction FET 10 as a main transistor and also includes an MISFET 20 as a control transistor. The junction FET 10 has a first gate electrode G1, a first source electrode S1, and a first drain electrode D1. The MISFET 20 has a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. The MISFET 20 is of an n channel type and has enhancement type electric characteristics. The second gate electrode G2 of the MISFET 20 is short-circuited to the second drain electrode D2 thereof, and the first gate electrode G1 of the junction FET 10 is short-circuited to the second source electrode S2 of the MISFET 20. <P>COPYRIGHT: (C)2010,JPO&INPIT |
