| 摘要 |
Provided is a semiconductor device having a suicide thin film with thermal stability and a method of manufacturing the same. The semiconductor device includes a silicon substrate containing Si a gate oxide film formed on the silicon substrate, a gate electrode containing Si formed on the gate oxide film, a spacer formed on side walls of the gate oxide film and the gate electrode, a LDD region formed in the silicon substrate under the spacer, a source/drain region formed in the silicon substrate, a NiSi thin film formed on the source/drain region and the gate electrode by reacting a Ni film with the source/drain region and the gate electrode; and a nitride film formed on the NiSi thin film formed by surface treating the nickel film using Ar plasma and reacting the Ni film with nitrogen. The, a semiconductor device having the NiSi thin film has a low sheet resistance and high thermal stability can be obtained. |
