发明名称 |
NON-POLAR TYPE NONVOLATILE MEMORY ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a non-polar type nonvolatile memory element containing neither rare element nor hazardous element. SOLUTION: The non-polar type nonvolatile memory element is formed by utilizing the characteristics in which a resistance value changes depending on a change in voltage applied to an oxide film by a single electrode, wherein the oxide film is an oxide film made of aluminum. Preferably, the oxide film is an anodic oxide film. A memory element obtained by anodizing a bulk aluminum plate or an aluminum thin film formed by sputtering or evaporation coating, in a solution of oxalic acid or sulfuric acid, especially exhibits excellent characteristics as a non-polar type. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010199104(A) |
申请公布日期 |
2010.09.09 |
申请号 |
JP20090038727 |
申请日期 |
2009.02.23 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
KATO SEIICHI;NIKO KIYOSUKE;LEE SEIYU;KITAZAWA HIDEAKI;KIDO YOSHIO;NAKANO YOSHIHIRO |
分类号 |
H01L27/10;H01L21/316;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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