| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting element, as well as, a light emitting element, capable of obtaining a light emitting element of long wavelength and improved emission characteristics. <P>SOLUTION: The method for manufacturing the light emitting element of a group III-V compound semiconductor, having a quantum well structure containing In and N, includes:a step for forming a well layer 13a containing In and N; a step for forming a barrier layer 13b which contains N and has a band gap larger than the well layer; and a step in which the gas containing N is supplied and epitaxial growth is interrupted, after the process of forming the well layer 13a but prior to the process of forming the barrier layer 13b. In the interrupting step, such gas is supplied as has a decomposition efficiency that is higher than that of decomposition from N<SB>2</SB>and NH<SB>3</SB>to active nitrogen at 900°C. In the interrupting step, a gas which is different from the source of N of the well layer 13a and barrier layer 13b is supplied. <P>COPYRIGHT: (C)2010,JPO&INPIT |
