| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve adhesion between a wiring material and a barrier metal layer. <P>SOLUTION: A semiconductor device includes: an interlayer insulating film having a surface on which a recess is formed; a microcrystalline first layer 30b, formed on the interlayer insulating film and including Ti and N, in which Ti content within all components, excluding oxygen (O) and noble metal components exceeds 50 at%; and a Cu metal layer 70, formed on the first layer 30b and filling the recess formed in the interlayer insulating film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
