| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an electrooptical device, reducing contact resistance between a metal wire having a surface layer made of Ti and a conductive member even when a silicon nitride film formed by plasma CVD process is used as an insulating film formed on the surface of the metal wire. SOLUTION: The method of manufacturing an electrooptical device includes a step of forming, on the surface of the metal wires 17, 18 having at least a surface layer made of Ti, a first insulating film 37a or 38a and then a second insulating film 37b or 38b made of silicon nitride by means of plasma CVD, and forming contact holes 51, 52 in the second insulating film 37b or 38b and the first insulating film 37a or 38a to expose the surface made of Ti of the metal wire 17, 18. The first insulating film 37a or 38a is formed of a material which does not form ball-like silicon nitride when forming the second insulating film 37b or 38b made of silicon nitride. COPYRIGHT: (C)2010,JPO&INPIT
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