| 摘要 |
<p>Provided is a semiconductor light emitting device (100C) and a lighting system (200) including the same. The semiconductor light emitting device comprises a substrate (101), a first semiconductor layer (105) on the substrate, an air-gap part (109) disposed in at least a portion between the substrate and the first semiconductor layer, and a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer (110), an active layer (120), and a second conductive type semiconductor layer (130) on the first semiconductor layer.</p> |
