NEGATIVE-TONE E-BEAM LITHOGRAPHY RESIST COMPOSITION INCLUDING AZIDE-FUNCTIONALIZED PST-RANDOM COPOLYMER

摘要

PURPOSE: A negative-tone electron beam lithography resist composition is provided to be economically manufactured, to easily control a crosslinked part by controlling a synthesis ratio, to easily control the thickness of the electron beam resist, and to be applied to a lithography process. CONSTITUTION: A negative-tone electron beam lithography resist composition includes a polystyrene random copolymer including an azide functional group. The dose of the electron beam resist is 40μC/cm^2 - 116μC/cm^2. The polystyrene random copolymer is synthesized by polymerizing a styrene monomer and 1-(chloromethyl)-4-vinylbenzene through a RAFT(reversible addition-fragmentation chain transfer) method.